Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP

Author

Pantoja, Jose Miguel Miranda ; Lin, Chih-I ; Shaalan, Mohamed ; Sebastian, Jose Luis ; Hartnagel, Hans L.

Author_Institution

Dept. de Fisica Aplicada III, Univ. Complutense de Madrid, Spain

Volume

48

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1275

Lastpage

1279

Abstract

A simulation at microscopic level of the intrinsic microwave noise temperature associated with GaAs and InP semiconductors under far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigated, and the results show the existence of threshold fields above which electron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with available experimental data has also been made to verify the accuracy of the models used in the simulation

Keywords

III-V semiconductors; Monte Carlo methods; doping profiles; microwave transistors; semiconductor device models; semiconductor device noise; GaAs; InP; Monte Carlo simulation; doping level; electric field; electron heating; intervalley scattering; microscopic level; microwave noise temperature; noise improvements; partition noise; physical temperature; threshold fields; Electromagnetic heating; Electrons; Gallium arsenide; Indium phosphide; Microscopy; Noise level; Resistance heating; Semiconductor device doping; Semiconductor device noise; Temperature dependence;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.853472

Filename

853472