DocumentCode
1361848
Title
Rapid Light Output Degradation of GaN-Based Packaged LED in the Early Stage of Humidity Test
Author
Tan, Cher Ming ; Chen, B.K. ; Li, X. ; Chen, Sihan Joseph
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
12
Issue
1
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
44
Lastpage
48
Abstract
An initial sharp decrease in the light output of a high-power light-emitting diode is observed when it is exposed to humid condition. TGA and energy-dispersive system analyses confirm the possibility of moisture entrapment in the silicone encapsulation; moreover, the light scattering model verifies qualitatively the scattering of the light due to the entrapped moisture, and it is this scattering that renders an initial sharp drop in the light output. The finding shows the importance of pore size of the silicone gel in order to prevent such sharp decrease in the light output under a humid environment.
Keywords
gallium compounds; gels; humidity; humidity measurement; light emitting diodes; light scattering; porous materials; semiconductor device reliability; semiconductor device testing; silicones; thermal analysis; wide band gap semiconductors; GaN; GaN-based packaged LED; TGA; energy-dispersive system; humidity test; light scattering model; pore size; rapid light output degradation; silicone encapsulation; silicone gel; Degradation; Humidity; Light emitting diodes; Light scattering; Moisture; Optical variables measurement; Resins; Humidity; light scattering; moisture entrapment; silicone pore size;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2011.2173346
Filename
6060903
Link To Document