• DocumentCode
    1361848
  • Title

    Rapid Light Output Degradation of GaN-Based Packaged LED in the Early Stage of Humidity Test

  • Author

    Tan, Cher Ming ; Chen, B.K. ; Li, X. ; Chen, Sihan Joseph

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    12
  • Issue
    1
  • fYear
    2012
  • fDate
    3/1/2012 12:00:00 AM
  • Firstpage
    44
  • Lastpage
    48
  • Abstract
    An initial sharp decrease in the light output of a high-power light-emitting diode is observed when it is exposed to humid condition. TGA and energy-dispersive system analyses confirm the possibility of moisture entrapment in the silicone encapsulation; moreover, the light scattering model verifies qualitatively the scattering of the light due to the entrapped moisture, and it is this scattering that renders an initial sharp drop in the light output. The finding shows the importance of pore size of the silicone gel in order to prevent such sharp decrease in the light output under a humid environment.
  • Keywords
    gallium compounds; gels; humidity; humidity measurement; light emitting diodes; light scattering; porous materials; semiconductor device reliability; semiconductor device testing; silicones; thermal analysis; wide band gap semiconductors; GaN; GaN-based packaged LED; TGA; energy-dispersive system; humidity test; light scattering model; pore size; rapid light output degradation; silicone encapsulation; silicone gel; Degradation; Humidity; Light emitting diodes; Light scattering; Moisture; Optical variables measurement; Resins; Humidity; light scattering; moisture entrapment; silicone pore size;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2011.2173346
  • Filename
    6060903