Investigation of floating gate depletion effect on NAND FLASH reliability

Author

Jeng-Hwa Liao ; Jung-Yi Guo ; Yu-Min Lin ; Jung-Yu Hsieh ; Ling-Wu Yang ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu

Author_Institution

Macronix Int. Co. Ltd., Hsinchu, Taiwan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.

Keywords

NAND circuits; flash memories; integrated circuit reliability; ion implantation; phosphorus; FG bending minimization; FG depletion; FG height loss; FG polydepletion issue; NAND FLASH device; NAND FLASH reliability; P-IMP; cell reliability; continuous technology scaling; floating gate depletion effect; in-situ dope poly; phosphorous implantation; phosphorous out-gassing; plasma oxide; rotation times; screen oxide; size 36 nm; temperature control; Flash memories; Implants; Oxidation; Plasma temperature; Reliability; Silicon; cold implantation; floating gate; plasma oxidation; poly bending; poly loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940049

Filename

6940049