• DocumentCode
    1362316
  • Title

    Eye-opening improved electroabsorption modulator/DFB laser diode with optimized thickness of the separate-confinement heterostructure layers

  • Author

    Miyazaki, Yasunori ; Ishimura, Eitaro ; Aoyagi, Toshitaka ; Tada, Hitoshi ; Matsumoto, Keisuke ; Takiguchi, Tohru ; Shimizu, Katsuhiro ; Noda, Masaki ; Mizuochi, Takashi ; Nishimura, Takashi ; Omura, Etsuji

  • Author_Institution
    High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    36
  • Issue
    8
  • fYear
    2000
  • Firstpage
    909
  • Lastpage
    915
  • Abstract
    The separate-confinement heterostructure (SCH) of an electroabsorption modulator integrated with a distributed feedback laser diode (EAM-LD) was optimized to obtain a clear optical waveform (eye opening) without penalty of chirp characteristics. The electric field applied to the multiple-quantum-well (MQW) structure was controlled by employing the proper thickness of undoped SCH layers to attain gentle absorption characteristics of the EAM at the optical mark level. As a result, the eye opening of the modulated emission at 10 Gb/s was improved and the intersymbol interference was reduced. No severe drawback on chirp characteristics was found in an /spl alpha/-parameter measurement. EAM-LD´s with the optimized SCH structure exhibited good transmission characteristics of power penalties under 1.5 dB at 10 Gb/s, and the reliability of 10 Gb/s transmission characteristics was also confirmed. We have also investigated how the optical waveform after transmission was affected by the dependence of the /spl alpha/-parameter on bias voltage. Measurement and numerical calculation of the optical waveform after transmission showed that the optical waveform was severely affected by the /spl alpha/-parameters at deep reverse voltages.
  • Keywords
    chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; integrated optoelectronics; intersymbol interference; quantum well lasers; /spl alpha/-parameter; /spl alpha/-parameter measurement; 10 Gbit/s; Gb/s transmission characteristics; MQW structure; absorption characteristics; chirp characteristics; clear optical waveform; deep reverse voltages; distributed feedback laser diode; electric field; electroabsorption modulator; eye-opening improved electroabsorption modulator/DFB laser diode; intersymbol interference; modulated emission; optical mark level; optical waveform; optimized SCH structure; optimized thickness; power penalties; reliability; separate-confinement heterostructure layers; transmission characteristics; undoped SCH layers; Chirp modulation; Diode lasers; Distributed feedback devices; Integrated optics; Optical control; Optical feedback; Optical modulation; Quantum well devices; Thickness control; Voltage;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.853539
  • Filename
    853539