Comparison of analog performance between SOI and Bulk pFinFET

This paper presents an experimental comparison of the analog performance between triple gate pMOSFET devices constructed on Silicon-On-Insulator (SOI) and Bulk substrates. This comparison was performed based on the drain current, subthreshold swing, transconductance over drain current ratio, Early voltage, intrinsic voltage gain and, finally, unit gain frequency. The SOI devices presented a superior analog behavior compared to the Bulk ones for almost all studied dimensions, except for the short channel length and wide fin width, where the back parasitic conduction degraded all the analyzed parameters. Furthermore, due to the existence of the doping implantation under the channel region in the Bulk devices, it became less susceptible to any leakage in this region.