CMOS Active-Pixel Sensor in low temperature

Author

do Rosario, Pedro V. F. ; Salles, Luciana P. ; de Mello, Artur S. B. ; de Lima Monteiro, Davies W.

Author_Institution

Dept. of Electr. Eng., Univ. Fed. de Minas Gerais, Belo Horizonte, Brazil

fYear

2014

fDate

1-5 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents experimental and simulated results of an Active-Pixel Sensor (APS) circuit operating at different temperatures (300K, 77K, 60K and 40K). The optical sensor used was a silicon photodiode integrated with its electronics in a standard CMOS 0.35μm technology. Interestingly, the pixel worked well at all temperatures tested. These first experimental results are very promising for future hybridization between APS circuits and infrared quantum sensors, mostly on III-V semiconductor substrates, or other applications demanding low temperatures.

Keywords

CMOS image sensors; cryogenic electronics; infrared detectors; integrated optoelectronics; optical sensors; APS circuit; CMOS active-pixel sensor circuit; CMOS technology; III-V semiconductor substrates; infrared quantum sensors; low temperatures; optical sensor; silicon photodiode; size 0.35 mum; temperature 300 K; temperature 40 K; temperature 60 K; temperature 77 K; Capacitance; Integrated optics; Optical imaging; Optical sensors; Physics; Temperature sensors; Tin; Active Pixel Sensor; CMOS analog integrated circuits; cryogenic circuits; integrated optoelectronics; low temperature; optical sensor; photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on

Conference_Location

Aracaju

Type

conf

DOI

10.1109/SBMicro.2014.6940114

Filename

6940114