Improving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications

Author

Navarenho de Souza, Rafael ; Guazzelli da Silveira, Marcilei A. ; Pinillos Gimenez, Salvador

Author_Institution

Dept. of Electr. Eng., Centro Univ. da FEI, São Bernardo do Campo, Brazil

fYear

2014

fDate

1-5 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

This paper describes an experimental comparative study of the total ionizing dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layouts (CnM). Because of the special characteristic of the bird´s beaks regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to increase the devices TID hardness for analog integrated circuits (IC) applications in terms of the unity voltage gain frequency (f_T) without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.

Keywords

MOSFET; analogue integrated circuits; radiation hardening (electronics); CMOS manufacturing process; CnM; MOSFETs radiation robustness; S gate geometry; WnM; analog ICs; analog integrated circuits; bird beaks regions; complementary MOS manufacturing process; device TID hardness; metal-oxide-semiconductor field effect transistors; standard layouts; total ionizing dose effect; unity voltage gain frequency; wave MOSFET; wave layout; CMOS integrated circuits; CMOS technology; Discharges (electric); Layout; Logic gates; Proposals; Random access memory; TID; Wave layout; analog circuits; radiation hardness by design; total ionizing dose; unit voltage gain frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on

Conference_Location

Aracaju

Type

conf

DOI

10.1109/SBMicro.2014.6940117

Filename

6940117