Scaling of longitudinally diode-pumped self-frequency-doubling Nd:YCOB lasers

Author

Hammons, Dennis A. ; Richardson, Martin ; Chai, Bruce H T ; Chin, A.K. ; Jollay, R.

Author_Institution

Center for Res. & Educ. in Opt. & Lasers, Univ. of Central Florida, Orlando, FL, USA

Volume

36

Issue

8

fYear

2000

Firstpage

991

Lastpage

999

Abstract

We report the scaling of a new self-frequency-doubling laser, based on the crystal Nd/sup 3+/:YCa/sub 4/O(BO/sub 3/)/sub 3/, to higher powers. The power scaling is achieved by diode pumping using a novel technology of combining the output of up to four high-brightness laser diodes. Spectroscopic, thermo-mechanical, and laser properties are investigated for use in designing high-power self-frequency-doubling lasers. Using a method of angular-multiplexing individual laser diodes for pumping, we demonstrate output powers of more than 1.9 W of fundamental (1060 nm) radiation and 245 mW at the second harmonic. Experimental investigation rendered a thermal stress resistance figure-of-merit for this material to be between 210-280 W/m.

Keywords

Fourier transform spectra; calcium compounds; impurity absorption spectra; infrared spectra; laser beams; neodymium; optical harmonic generation; optical pumping; photoluminescence; solid lasers; thermal stresses; ultraviolet spectra; visible spectra; yttrium compounds; 1.9 W; 1060 nm; 245 mW; Nd/sup 3+/:YCa/sub 4/O(BO/sub 3/)/sub 3/; YCa/sub 4/O(BO/sub 3/)/sub 3/:Nd; angular-multiplexing individual laser diodes; design; diode pumping; fundamental radiation; high-power self-frequency-doubling lasers; laser diodes; laser properties; longitudinally diode-pumped self-frequency-doubling; novel technology; output powers; power scaling; pumping; second harmonic; self-frequency-doubling laser; spectroscopic properties; thermal stress resistance figure-of-merit; thermo-mechanical properties; Diode lasers; Laser excitation; Neodymium; Optical design; Power lasers; Pump lasers; Spectroscopy; Thermal resistance; Thermal stresses; Thermomechanical processes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.853561

Filename

853561