Title :
Measurement and analysis of GaAs MESFET parasitic capacitances
Author :
Anholt, R. ; Swirhun, S.
Author_Institution :
Gateway Modeling Inc., Minneapolis, MN, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
From S-parameter measurements and subsequent equivalent-circuit parameter (ECP) extraction for a series of 0.25-μm, ion-implanted GaAs MESFETs with different widths and different gate-source and drain-source spacings, parasitic FET pad capacitances and interelectrode capacitances. The active-FET fringe capacitances extracted at pinch-off are compared with results from two-dimensional Poisson simulations
Keywords :
III-V semiconductors; Schottky gate field effect transistors; capacitance; equivalent circuits; gallium arsenide; semiconductor device models; 0.25 micron; GaAs; MESFET; S-parameter measurements; active-FET fringe capacitances; equivalent circuit parameter extraction; equivalent-circuit; interelectrode capacitances; parasitic FET pad capacitances; parasitic capacitances; pinch-off; semiconductors; two-dimensional Poisson simulations; Capacitance measurement; Doping; Electrical resistance measurement; Electrons; FETs; Gallium arsenide; MESFETs; Parasitic capacitance; Scattering parameters; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
