• DocumentCode
    1362947
  • Title

    Solid state: The case for CMOS: Its low power consumption and many design choices mean that by the decade´s end, half of all ICs may be made by this technique

  • Author

    Davies, R.D.

  • Author_Institution
    Texas Instruments Inc., Dallas, TX, USA
  • Volume
    20
  • Issue
    10
  • fYear
    1983
  • Firstpage
    26
  • Lastpage
    32
  • Abstract
    The versatility of CMOS in meeting diverse circuit-design requirements and the reduced cost of processing CMOS are examined from the viewpoint of very large-scale integration. The application of CMOS in dynamic memory is outlined, along with the tradeoffs in optimizing the processing of CMOS devices. The creation of faster CMOS circuits, improved layout density, and interconnections are also highlighted. The necessary advances expected to propel CMOS technology beyond the current level of circuits in the 4-Mb dynamic RAM and 1-b static RAM classes are examined, with particular regard to groove isolation, stacking of transistors, and silicon-on-insulator fabrication.
  • Keywords
    field effect integrated circuits; integrated memory circuits; large scale integration; CMOS; Si-insulator; VLSI; circuit-design; dynamic RAM; dynamic memory; field effect ICs; groove isolation; interconnections; layout density; stacking of transistors; static RAM; very large-scale integration; CMOS integrated circuits; CMOS technology; Logic gates; MOS devices; Metallization; Random access memory; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1983.6369986
  • Filename
    6369986