Effects of carrier heating, nonequilibrium LO phonons and lattice heating on small-signal modulation response of semiconductor lasers

Author

Tsai, Chi-Yi ; Sung, Ta-Lun ; Chen, Chun-Hung ; Wu, Tin-Yu

Author_Institution

Dept. of Electron. & Electr. Eng., De Montfort Univ., Leicester

Volume

145

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

13

Lastpage

20

Abstract

A small-signal analysis is presented for the modulation response of semiconductor lasers by simultaneously incorporating the effects of carrier heating, nonequilibrium LO phonons and lattice heating. The authors theoretically investigate, without the definition of steady-state carrier energy relaxation time, the effects of the lifetime of LO phonons and the thermal time of acoustic phonons on the small-signal modulation response of semiconductor lasers. They show that if the LO phonon lifetime approaches the inverse of modulation frequency the assumption about the quasistatic population variation of LO phonons may lose its validity in discussing the modulation response of semiconductor lasers

Keywords

electro-optical modulation; laser theory; phonons; relaxation; semiconductor device models; semiconductor lasers; LO phonon lifetime; carrier heating; lattice heating; modulation frequency inverse; nonequilibrium LO phonons; quasistatic population variation; semiconductor lasers; small-signal analysis; small-signal modulation response; steady-state carrier energy relaxation time;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19981720

Filename

668002