Experimental analysis of transmission line parameters in high-speed GaAs digital circuit interconnects

Author

Kiziloglu, Kiirgad ; Dagli, Nadir ; Matthaei, George L. ; Long, Stephen I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

39

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1361

Lastpage

1367

Abstract

Transmission line properties of typical high-speed interconnects were experimentally investigated by fabricating and characterizing coplanar strips on semi-insulating GaAs substrates. The strips have thicknesses of about 2500 Å or 5000 Å and widths of 4, 6, or 8 μm so as to be representative of on-chip interconnects in high-speed GaAs digital circuits. Measurements are carried out up to 18 GHz, and the pertinent line parameters, such as resistance, capacitance per unit length, and characteristic impedance, are extracted using the measured S-parameters. The measurement results confirm the quasi-TEM properties of such interconnects. In all cases, the measured distributed capacitance and inductance are sensitive to frequency whereas the resistance is found to increase as much as 38% for the widest and thickest conductors

Keywords

III-V semiconductors; S-parameters; digital integrated circuits; gallium arsenide; monolithic integrated circuits; strip line components; 18 GHz; 4 to 8 micron; GaAs; S-parameters; capacitance per unit length; characteristic impedance; coplanar strips; digital circuit interconnects; distributed capacitance; distributed inductance; high-speed interconnects; quasi-TEM properties; resistance; semi-insulating GaAs substrates; transmission line parameters; Capacitance measurement; Coplanar transmission lines; Digital circuits; Electrical resistance measurement; Gallium arsenide; Impedance measurement; Integrated circuit interconnections; Length measurement; Strips; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.85411

Filename

85411