DocumentCode
1363862
Title
Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier
Author
Zhang, Siyu ; Qiao, Zhongliang ; Bo, Baoxue ; Gao, Xin ; Qu, Yi ; Liu, Guojun
Author_Institution
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Volume
29
Issue
24
fYear
2011
Firstpage
3689
Lastpage
3692
Abstract
Integrated 808 nm wavelength SLDs with a ring SLD seed source and a tapered amplifier were fabricated. Output power of 400 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum is 31 nm.
Keywords
amplifiers; integrated optics; light sources; optical fabrication; superluminescent diodes; continuous wave mode; emission spectrum; integrated superluminescent diodes; power 400 mW; ring seed source; tapered amplifier; wavelength 808 nm; Etching; Power amplifiers; Ring lasers; Semiconductor lasers; Superluminescent diodes; Ring laser; super-luminescent diodes; tapered amplifier;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2011.2173901
Filename
6062629
Link To Document