A low phase-error 44-GHz HEMT attenuator

Author

Sjogren, L. ; Ingram, D. ; Biedenbender, M. ; Lai, R. ; Allen, B. ; Hubbard, K.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

8

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

194

Lastpage

195

Abstract

Radio frequency (RF) subsystems for emerging millimeter-wave applications require monolithic microwave integrated circuit (MMIC) attenuators with constant phase over the attenuation range. In this work, we present the results for a 44 GHz stepped attenuator implemented in high electron mobility transistor (HEMT) MMIC technology. Use of a switched-path topology provides a high attenuation range (>30 dB) with good phase flatness (<7° p-p) and return loss (>14.5 dB) over the attenuation range. The same design topology should be well suited for other frequencies throughout the upper microwave and lower millimeter-wave range

Keywords

HEMT integrated circuits; attenuators; field effect MIMIC; 14.5 dB; 44 GHz; HEMT attenuator; MMIC attenuators; constant phase; high electron mobility transistor; low phase-error attenuator; millimeter-wave applications; monolithic MM-wave integrated circuit; stepped attenuator; switched-path topology; Application specific integrated circuits; Attenuation; Attenuators; HEMTs; MMICs; Microwave integrated circuits; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Radio frequency;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.668708

Filename

668708