Title :
Polarity-Dependent Morphological Changes of Ti/TiN/W Via Under High Current Density
Author :
Kim, Deok-Kee ; Park, Yoondong
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
Electrical voltage polarity-dependent failures of Ti/TiN/W via fuses were observed and analyzed by microstructural analyses and flux calculations based on the simulated Thomson-shifted temperature profiles. In the forward program, electromigration (EM) was in the same direction as thermomigration (TM), while in the reverse program, EM was in the opposite direction from TM, which made the forward program more efficient. When designing a fuse device, various fluxes had to be taken into account.
Keywords :
DRAM chips; current density; electric fuses; electromigration; titanium; titanium compounds; tungsten; DRAM; Ti-TiN-W; current density; electrical voltage polarity-dependent failures; electromigration; flux calculations; forward program; fuse device; microstructural analysis; polarity-dependent morphological changes; reverse program; simulated Thomson-shifted temperature profiles; thermomigration; via fuses; Copper; electromigration (EM); thermomigration (TM); tungsten;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2036573