DocumentCode :
1364753
Title :
Polarity-Dependent Morphological Changes of Ti/TiN/W Via Under High Current Density
Author :
Kim, Deok-Kee ; Park, Yoondong
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea
Volume :
31
Issue :
2
fYear :
2010
Firstpage :
120
Lastpage :
122
Abstract :
Electrical voltage polarity-dependent failures of Ti/TiN/W via fuses were observed and analyzed by microstructural analyses and flux calculations based on the simulated Thomson-shifted temperature profiles. In the forward program, electromigration (EM) was in the same direction as thermomigration (TM), while in the reverse program, EM was in the opposite direction from TM, which made the forward program more efficient. When designing a fuse device, various fluxes had to be taken into account.
Keywords :
DRAM chips; current density; electric fuses; electromigration; titanium; titanium compounds; tungsten; DRAM; Ti-TiN-W; current density; electrical voltage polarity-dependent failures; electromigration; flux calculations; forward program; fuse device; microstructural analysis; polarity-dependent morphological changes; reverse program; simulated Thomson-shifted temperature profiles; thermomigration; via fuses; Copper; electromigration (EM); thermomigration (TM); tungsten;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2036573
Filename :
5361366
Link To Document :
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