Title :
Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure
Author :
Ro, Ruyen ; Chiang, Yuan-Feng ; Sung, Chia-Chi ; Lee, Ruyue ; Wu, Sean
Author_Institution :
Dept. of Electr. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness-to-wavelength ratio.
Keywords :
III-V semiconductors; aluminium; aluminium compounds; copper; diamond; finite element analysis; interdigital transducers; metallic thin films; piezoelectric semiconductors; piezoelectric thin films; reflectivity; semiconductor thin films; surface acoustic wave transducers; surface acoustic waves; wide band gap semiconductors; (100) oriented AlN-diamond structure; AlN-C-Al; AlN-C-Cu; RF filter design; SAW propagation; aluminum electrode; copper electrode; coupling coefficient; duplexer design; finite element method; interdigital transducer; phase velocity; piezoelectric film; reflectivity; thin metal film-AlN-IDT-diamond electrical interface; Councils; Electrodes; Gratings; Optical films; Power capacitors; Reflectivity; Resonance; Resonant frequency; Surface acoustic wave devices; Surface acoustic waves; Aluminum Compounds; Computer Simulation; Crystallization; Diamond; Finite Element Analysis; Models, Chemical; Scattering, Radiation;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2010.1377
