Title :
A model for GRIN-SCH-SQW diode lasers
Author :
Chinn, Stephen R. ; Zory, Peter S. ; Reisinger, Axel R.
Author_Institution :
General Electric Co., Syracuse, NY, USA
fDate :
11/1/1988 12:00:00 AM
Abstract :
A comprehensive model for graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) AlxGa1-xAs diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain-vs.-current density data for different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, and the high-gain kink in T0 versus temperature is qualitatively explained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser theory; semiconductor junction lasers; AlxGa1-xAs diode lasers; III-V semiconductors; current density; gain; graded-index; separate-confinement-heterostructure; single-quantum-well; Carrier confinement; Charge carrier density; Current density; Diode lasers; Laser modes; Laser theory; Optical design; Optical waveguides; Temperature dependence; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
