DocumentCode
1365985
Title
Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels
Author
Tsai, Jeng-Han ; Lour, W.-S. ; Huang, Cong-Hui ; Ye, S.-S. ; Ma, Y.-C.
Author_Institution
Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan
Volume
46
Issue
22
fYear
2010
Firstpage
1522
Lastpage
1523
Abstract
Direct current characteristics of an InGaP /InGaAs pseudomorphic HFET employing low-to-high double doping channels are first demonstrated and compared with the conventional single doping-channel device. Because the lower InGaAs channel is heavily doped and two-dimensional electron gas is formed in this channel, the threshold voltage is extended to -3.7 V. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing up to 4.5 V is achieved in the studied device, which is greater than that of 3.85 V in the single doping-channel device.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; indium compounds; semiconductor doping; InGaP-InGaAs; direct current characteristic; gate voltage swing enhancement; low-to-high double doping channel; pseudomorphic HFET; threshold voltage; two-dimensional electron gas;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.2078
Filename
5614027
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