Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

Author

Casse, G. ; Allport, P.P. ; Hanlon, M.

Author_Institution

Oliver Lodge Lab., Liverpool Univ., UK

Volume

47

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

527

Lastpage

532

Abstract

The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I_r) and full depletion voltage (V_fd) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V_fd and CCE compared to un-oxygenated substrate devices

Keywords

oxidation; proton effects; radiation hardening (electronics); silicon radiation detectors; Si; electrical properties; full depletion voltage; n-type substrate; oxygenation; p-type substrate; pad diode; proton irradiation; radiation hardness; reverse current; silicon detector; Conductivity; Degradation; Diodes; Laboratories; Large Hadron Collider; Microstrip; Protons; Radiation detectors; Silicon radiation detectors; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.856475

Filename

856475