Title :
Thin film pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunnelling diodes integrated onto Si substrates
Author :
Evers, N. ; Vendier, O. ; Chun, C. ; Murti, M.R. ; Laskar, J. ; Jokerst, N.M. ; Moise, T.S. ; Kao, Y.C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report high peak-to-valley current ratio (PVR) resonant tunneling diodes (RTDs) bonded to silicon. Pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunneling diode structures grown on semi-insulating InP with peak-to-valley current ratios as high as 30 at 300 K have been separated from the growth substrate and bonded to silicon substrates coated with Si/sub 3/N/sub 4/, forming thin film devices. In addition, thin film multiple stack RTD structures have been bonded to silicon substrates. The I-V characteristics of both the single and multi-stacked thin film RTD´s exhibit no signs of degradation after bonding to the host substrate. These results are the first successful demonstration of InP based electronics bonded to a silicon host substrate and enable the integration of RTDs with conventional silicon circuitry.
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; indium compounds; resonant tunnelling diodes; 300 K; AlAs-In/sub 0.53/Ga/sub 0.47/As-InAs-Si; I-V characteristics; III-V semiconductors; Si; host substrate; peak-to-valley current ratio; pseudomorphic resonant tunnelling diodes; thin film multiple stack RTD structures; Bonding; Diodes; Indium phosphide; Resonant tunneling devices; Semiconductor thin films; Silicon; Substrates; Thin film circuits; Thin film devices; Transistors;
Journal_Title :
Electron Device Letters, IEEE
