DC and RF performance of 0.25 μm p-type SiGe MODFET

Author

Arafa, M. ; Fay, P. ; Ismail, K. ; Chu, J.O. ; Meyerson, B.S. ; Adesida, I.

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

17

Issue

9

fYear

1996

Firstpage

449

Lastpage

451

Abstract

The DC and RF performance of a 0.25 μm gate-length p-type SiGe modulation-doped field-effect transistor (MODFET) is reported. The hole channel consists of compressively strained Si/sub 0.3/Ge/sub 0.7/ layer grown on a relaxed Si/sub 0.7/Ge/sub 0.3/ buffer on a Si substrate. The combination of high-hole mobility, low-gate leakage current, and improved ohmic contact metallization results in an enhancement of the DC and RF performance. A maximum extrinsic transconductance (g(m/sub e/xt)) of 230 mS/mm was measured. A unity current gain cut-off frequency (fT) of 24 GHz and a maximum frequency of oscillation (f_max) of 37 GHz were obtained for these devices.

Keywords

Ge-Si alloys; characteristics measurement; high electron mobility transistors; hole mobility; leakage currents; ohmic contacts; semiconductor materials; 0.25 micron; 24 GHz; 37 GHz; MODFET; RF performance; Si; SiGe-Si; compressively strained layer; extrinsic transconductance; frequency of oscillation; gate leakage current; hole channel; hole mobility; modulation-doped field-effect transistor; ohmic contact metallization; unity current gain cut-off frequency; Cutoff frequency; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; Leakage current; MODFETs; Ohmic contacts; Radio frequency; Silicon germanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.536289

Filename

536289