Title :
8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss
Author :
Kekura, Mitsuru ; Akiyama, Hirokazu ; Tani, Masayuki ; Yamada, Shin-ichi
Author_Institution :
Meidensha Corp., Shizouka, Japan
fDate :
10/1/1990 12:00:00 AM
Abstract :
An 8 kV, 1 kA gate turn-off thyristor (GTO) that has been designed with a combination of a p-i-n structure and a ringed-anode short structure is discussed. The GTO has been fabricated using a diffusion and epitaxial buffer process. As a consequence, low on-state voltage and low switching loss have been achieved, solving the two major problems in high-voltage GTOs. The device´s structure, the p-i-n base process, and the electrical characteristics of the GTO are described
Keywords :
elemental semiconductors; semiconductor epitaxial layers; silicon; thyristors; vapour phase epitaxial growth; 1 kA; 8 kV; Si; diffusion; electrical characteristics; epitaxial buffer; gate turn-off thyristor; low on-state voltage; low switching loss; p-i-n structure; ringed-anode short structure; semiconductor device manufacture; Anodes; Circuits; Electric variables; Epitaxial growth; Inverters; Low voltage; PIN photodiodes; Switching loss; Tail; Thyristors;
Journal_Title :
Power Electronics, IEEE Transactions on
