DocumentCode
136745
Title
A simple gate assist circuit for SiC devices
Author
Miaosen Shen
Author_Institution
United Technol. Res. Center, East Hartford, CT, USA
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
6
Abstract
SiC MOSFET has been proven to have tremendous advantages compared to Si counterpart due to its high switching speed and low conduction loss characteristics. However, it also imposes great challenges on users for high speed operation due to much smaller gate capacitance and smaller gate voltage tolerance range. This paper addresses one of the challenges, which is cross talk between switches in the same phase leg when high speed operation is intended.
Keywords
MOSFET; crosstalk; driver circuits; semiconductor device noise; semiconductor switches; silicon compounds; wide band gap semiconductors; SiC; crosstalk; gate assist circuit; high speed operation; high switching speed MOSFET; low conduction loss MOSFET; voltage tolerance; Capacitors; Logic gates; MOSFET; Resistors; Silicon carbide; Switches; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6941017
Filename
6941017
Link To Document