• DocumentCode
    1368645
  • Title

    Ballistic electrons in compound semiconductors

  • Author

    Eastman, L.F.

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • Volume
    23
  • Issue
    2
  • fYear
    1986
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    It is pointed out that shorter transit times in transistors can be obtained by only two techniques: constructing a device with a shorter active length, and accelerating the electrons to a higher velocity with a ballistic launcher. The work that has been done on these two techniques is surveyed. Various devices incorporating ballistic injection are described.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; high field effects; semiconductor device models; solid-state microwave devices; GaAs FET; ballistic electron injection; ballistic electron launcher; ballistic electron transistor; models; semiconductors; transit times; Aluminum; Educational institutions; Gallium arsenide; Laboratories; Logic gates; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1986.6370999
  • Filename
    6370999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1368645