Title :
High mobility two-dimensional electron gas in InP/Ga0.47In0.53As heterojunctions grown by low-pressure organometallic vapour phase epitaxy
Author :
Thijs, P.J.A. ; Woltjer
Author_Institution :
Philips Res. Labs, Eindhoven
fDate :
2/18/1988 12:00:00 AM
Abstract :
The two-dimensional electron gas in InP/GaInAs heterojunctions, grown by LP-OMVPE, showed Hall mobilities as high as 164000 and 103000 cm2/Vs at 4 K and 80 K, respectively. A maximum Hall mobility of 172000 cm2/Vs was measured at 20 K. Shubnikov-de Haas oscillations measured at 200 mK in magnetic fields up to 20 T indicated the total absence of parallel conduction. By illuminating the sample it was possible to populate the second electrical sub-band at a total carrier density ns=4.4×1011 cm-2
Keywords :
Hall effect; III-V semiconductors; carrier density; carrier mobility; electron gas; gallium arsenide; indium compounds; magnetoresistance; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; vapour phase epitaxial growth; 4 to 80 K; Hall mobilities; III-V semiconductor; InP-Ga0.47In0.53As heterojunctions; Shubnikov-de Haas oscillations; carrier density; low pressure MOVPE; magnetic fields; organometallic vapour phase epitaxy; sample illumination; second electrical subband; two-dimensional electron gas;
Journal_Title :
Electronics Letters
