DocumentCode :
1368845
Title :
Application of CMP process monitor to Cu polishing
Author :
Kojima, Tadayuki ; Miyajima, Motosyu ; Akaboshi, Fumihiko ; Yogo, Toshiya ; Ishimoto, Satoshi ; Okuda, Atushi
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Volume :
13
Issue :
3
fYear :
2000
fDate :
8/1/2000 12:00:00 AM
Firstpage :
293
Lastpage :
299
Abstract :
We have developed a chemical mechanical polishing (CMP) process monitor which uses polishing vibration. The monitor enables us to accurately detect the polishing end point in copper (Cu) polishing even when the process conditions such as initial film thickness, slurry flow and polishing rate are changed and when polishing multilayer film. Furthermore, the monitor is not only applicable to Cu polishing but also to planarizing polishing of an inter-level dielectric layer. The monitor can be also used to control the processes and the equipment because of its capability to detect abnormalities in the polishing conditions
Keywords :
chemical mechanical polishing; copper; dielectric thin films; integrated circuit metallisation; process monitoring; CMP; Cu; end point; initial film thickness; inter-level dielectric layer; multilayer film; planarizing polishing; polishing rate; polishing vibration; process monitor; slurry flow; Acceleration; Band pass filters; Condition monitoring; Copper; Dielectrics; Frequency; Infrared detectors; Laser beams; Slurries; Torque;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.857938
Filename :
857938
Link To Document :
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