Title :
Device dependent control of chemical-mechanical polishing of dielectric films
Author :
Patel, Nital S. ; Miller, Gregory A. ; Guinn, Christopher ; Sanchez, Adriana Cruz ; Jenkins, Steven T.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
8/1/2000 12:00:00 AM
Abstract :
This paper presents a control scheme for run-to-run control of chemical-mechanical polishing (CMP). The control scheme tracks both device pattern dependent and equipment induced disturbances. The structure of the controller is such that sensitivity to qual (unpatterned blanket oxide) wafer frequency is minimized. Additionally, prethickness variation and metrology delay are accounted for in the design. Results from applying this scheme in volume production are presented
Keywords :
chemical mechanical polishing; dielectric thin films; integrated circuit manufacture; process control; chemical-mechanical polishing; device dependent control; dielectric films; equipment induced disturbances; metrology delay; prethickness variation; run-to-run control; unpatterned blanket oxide; volume production; Chemicals; Delay; Dielectric films; Frequency; Metrology; Planarization; Production; Semiconductor device modeling; Semiconductor films; Thickness control;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
