1.5 V full-swing BiCMOS dynamic logic circuits

Author

Lee, Shan-Shan ; Ismail, Mohammed

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

760

Lastpage

768

Abstract

This paper presents the design of BiCMOS dynamic logic circuits that are capable of full-swing operation from low supply voltages down to 1.5 V. Basic full-swing low-voltage BiCMOS cells are introduced. These include emitter-follower complementary n-type cell, quasi-complementary n-type cell and a p-type cell based on the transiently saturated full-swing technique. The propagation delay, power consumption and the full-swing capability of such cells have been studied both at the cell level and in a 4 b CLA design. The results clearly show the validity of the proposed circuits for high-speed low-voltage operation

Keywords

BiCMOS digital integrated circuits; BiCMOS logic circuits; delays; logic design; 1.5 V; BiCMOS dynamic logic circuits; LV BiCMOS cells; emitter-follower complementary n-type cell; full-swing operation; high-speed operation; logic circuit design; low-voltage operation; p-type cell; power consumption; propagation delay; quasi-complementary n-type cell; transiently saturated full-swing technique; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Energy consumption; Integrated circuit technology; Logic circuits; Logic gates; Low voltage; MOS devices; MOSFETs;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.536745

Filename

536745