A circuit simulation model for high-frequency power MOSFETs

Author

Shenai, Krishna

Author_Institution

Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA

Volume

6

Issue

3

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

539

Lastpage

547

Abstract

A circuit simulation model suitable for modeling the static and dynamic switching characteristics of high-frequency power MOSFETs is reported. The model parameters were obtained from physical device layout, silicon doping, and measured electrical characteristics of power MOSFETs. Accurate voltage dependencies of the interelectrode capacitances were obtained from extensive two-dimensional device simulations. The voltage dependence of gate-drain capacitance was modeled using an analytic expression. The measured static current-voltage and transient-switching responses under resistive switching conditions are in excellent agreement with simulation results obtained from SPICE. The MOSFET subcircuit model was used to accurately predict the performance of a series-parallel resonant DC-DC converter using a multilevel system simulator

Keywords

circuit analysis computing; digital simulation; insulated gate field effect transistors; power convertors; power transistors; transients; SPICE; circuit simulation model; current-voltage responses; dynamic switching; electrical characteristics; gate-drain capacitance; high-frequency; interelectrode capacitances; multilevel system simulator; power MOSFET; series-parallel resonant DC-DC converter; silicon doping; static switching; transient-switching responses; two-dimensional device simulations; Capacitance; Circuit simulation; Doping; MOSFETs; Power measurement; Predictive models; Semiconductor process modeling; Silicon; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.85888

Filename

85888