DocumentCode
136982
Title
Transient unbalanced current analysis and suppression for parallel-connected silicon carbide MOSFETs
Author
Min Du ; Xiaofeng Ding ; Hong Guo ; Jiaqi Liang
Author_Institution
Sch. of Autom. Sci. & Electr. Eng., BeiHang Univ., Beijing, China
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
4
Abstract
In this paper, the inevitable unbalanced current of parallel-connected Silicon Carbide (SiC) MOSFETs is analyzed, and the corresponding balanced methods are proposed. Firstly, the transient unbalanced current according to different gate resistance (Rg) and gate-source capacitance (Cgs) between two parallel-connected SiC MOSFETs are investigated. Then, the appropriate gate additional resistance is used to suppress the transient unbalanced current through realization of gate drive delay. Finally, the proposed scheme is verified by both simulation and experimental results.
Keywords
MOSFET; silicon compounds; SiC; gate drive delay; gate resistance; gate-source capacitance; parallel-connected MOSFET; transient unbalanced current analysis; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Threshold voltage; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6941230
Filename
6941230
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