A low-power GaAs front-end IC with current-reuse configuration using 0.15-μm-gate MODFETs

Author

Ishida, Hidetoshi ; Koizumi, Haruhiko ; Miyatsuji, Kazuo ; Takenaka, Hiroshi ; Tanaka, Tsuyoshi ; Ueda, Daisuke

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

48

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1303

Lastpage

1307

Abstract

We have developed a novel current-reuse configuration of a front-end integrated circuit (IC), where the current can be reused in the whole circuit blocks that are a low-noise amplifier, local amplifier, and mixer. The power dissipation of the front-end IC is reduced by the factor of three as compared to conventional front-end ICs. Excellent RF performance such as conversion gain of 30 dB and noise figure of 1.6 dB at 1.5 GHz is attained under the conditions of the supply voltage and current of 3.6 V and 3 mA, respectively

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; UHF integrated circuits; field effect MMIC; gallium arsenide; low-power electronics; mobile radio; 0.15 micron; 1.5 GHz; 1.6 dB; 3 mA; 3.6 V; 30 dB; GaAs; MODFETs; conversion gain; current-reuse configuration; front-end IC; local amplifier; low-noise amplifier; power dissipation; supply current; supply voltage; Circuits; Current supplies; Gallium arsenide; Low-noise amplifiers; Noise figure; Performance gain; Power dissipation; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.859473

Filename

859473