Title :
A novel integrated decoupling capacitor for MCM-L technology
Author :
Chahal, Premjeet ; Tummala, Rao R. ; Allen, Mark G. ; Swaminathan, Madhavan
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
This paper discusses the design, materials, fabrication, and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates, Based on modeling using the Semiconductor Industry Association Roadmap, it has been estimated that 13-72 nF/cm2 of specific decoupling capacitance will be required for the next decade, The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 μm and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm2 have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures (varying geometry and dielectric thickness) to study input impedance and scaling of the devices
Keywords :
S-parameters; capacitors; dielectric losses; filled polymers; multichip modules; network analysers; permittivity; 0 to 100 micron; 0 to 20 GHz; MCM-L technology; capacitor structures; dielectric constant; dielectric thickness; filled polymer materials; geometry; input impedance; integrated decoupling capacitor; loss tangent; network analyzer; photodefinable processes; scattering parameters; via diameters; Capacitance measurement; Capacitors; Dielectric materials; Dielectric thin films; Electronics industry; Fabrication; Polymer films; Semiconductor materials; Semiconductor thin films; Substrates;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on