Title :
Design centring for yield and noise figure improvement of GaAs MESFETs
Author :
Lee, S.B. ; Tchah, K.H.
Author_Institution :
Dept. of Electron. & Commun. Eng., Korea Maritime Univ., Busan, South Korea
fDate :
8/1/1991 12:00:00 AM
Abstract :
An algorithm to determine the optimum nominal value of geometrical and material parameters in device modelling is proposed. The algorithm uses the yield and variance prediction formula and Monte-Carlo analysis. The optimum parameters are obtained when the yield becomes maximum. The performance specification of the noise figure must also be satisfied. Another algorithm for determining the optimal noise figure is derived. The noise figure is represented by geometrical and material parameters in simple device modelling. The algorithms are applied to a GaAs MESFET
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; MESFETs; Monte-Carlo analysis; design centring; device modelling; geometrical parameters; material parameters; noise figure improvement; optimum nominal value; variance prediction formula; yield;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
