Title :
MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
Author :
Möck, P. ; Booker, G.R. ; Mason, N.J. ; Alphandery, E. ; Nicholas, R.J.
fDate :
6/1/2000 12:00:00 AM
Abstract :
Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapour phase epitaxy and assessed by means of atomic force microscopy, transmission electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown at 490±10°C and luminance in the mid-infrared at about 1.7 μm. Reductions in the III/V ratio and growth rate as used for the second series resulted in a change of the morphology of the InSb islands from hillocks without facets and a low level of order, to dumbbell shaped islands with distinct facets and a higher level of order. Self-assembled GaSb islands were grown on GaAs at 550°C and assessed for comparison by means of AFM
Keywords :
MOCVD; atomic force microscopy; indium compounds; island structure; photoluminescence; self-assembly; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; 1.7 mum; 490 C; 550 C; AFM; GaSb; GaSb matrix; III/V ratio; InSb; InSb QDs; InSb islands; MOVPE grown; Sb-based quantum dots; TEM; atomic force microscopy; dumbbell shaped islands; growth rate; luminance; metal-organic vapour phase epitaxy; mid-infrared; morphology; photoluminescence; self-assembled; self-assembled GaSb islands; transmission electron microscopy;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000615
