• DocumentCode
    1372397
  • Title

    A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

  • Author

    Sandén, Martin ; Zhang, Shi-Li ; Grahn, Jan V. ; Östling, Mikael

  • Author_Institution
    Dept. of Electron., Kungl. Tekniska Hogskolan, Kista, Sweden
  • Volume
    47
  • Issue
    9
  • fYear
    2000
  • fDate
    9/1/2000 12:00:00 AM
  • Firstpage
    1767
  • Lastpage
    1769
  • Abstract
    A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance
  • Keywords
    bipolar transistors; elemental semiconductors; semiconductor device testing; silicon; Si; double polysilicon bipolar junction transistor; parameter extraction; test structure; Bipolar transistors; Capacitance; Circuit testing; Conductivity; Doping; Electrons; Hafnium; Impedance; Parameter extraction; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.861590
  • Filename
    861590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1372397