DocumentCode :
1372535
Title :
Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors
Author :
Zampardi, P.J. ; Pan, Dee-Son
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
17
Issue :
10
fYear :
1996
Firstpage :
470
Lastpage :
472
Abstract :
In this work, we present experimental evidence and develop a simple theory for the delay of base push out (Kirk effect) due to collector current spreading in heterojunction bipolar transistors (HBTs). This effect is very pronounced in small area devices even with short collectors. A correction factor relating the observed emitter current density at which peak cut-off is observed to the classical Kirk effect current limit is derived. This theory has very good agreement with measured data for several different epitaxial structures and has important, implications for the design of both digital and microwave transistors and circuits.
Keywords :
current density; delays; electric current; heterojunction bipolar transistors; microwave bipolar transistors; HBT; Kirk effect; base push out delay; collector current spreading; emitter current density; epitaxial structures; heterojunction bipolar transistors; small area devices; Current density; Delay effects; Heterojunction bipolar transistors; Kirk field collapse effect; Microwave circuits; Microwave measurements; Microwave theory and techniques; Microwave transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.537078
Filename :
537078
Link To Document :
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