Title :
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm
Author :
Lott, J.A. ; Ledentsov, N.N. ; Ustinov, V.M. ; Maleev, N.A. ; Zhukov, A.E. ; Kovsh, A.R. ; Maximov, M.V. ; Volovik, B.V. ; Alferov, Zh.I. ; Bimberg, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
fDate :
8/3/2000 12:00:00 AM
Abstract :
Pulsed lasing at 1.3 μm via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaAs substrates and when fabricated include selectively oxidised AlO current apertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at room temperature with threshold currents below 2 mA and differential slope efficiencies above 40%
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; excitons; gallium arsenide; ground states; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.3 mum; 2 mA; 298 K; 40 percent; AlO; AlO-GaAs; AlO/GaAs distributed Bragg reflectors; GaAs; GaAs substrates; InAs quantum dot active layers; InAs-InGaAs; InAs-InGaAs quantum dot VCSELs; VCSELs; differential slope efficiencies; exciton ground state; fabrication; intracavity metal contacts; pulsed lasing; quantum dot VCSELs; room temperature; selectively oxidised AlO current apertures; threshold currents; uncoupled sheets; vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000988
