Title :
0.1 μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax
Author :
Hock, G. ; Hackbarth, Thomas ; Herzog, H.-J. ; Enciso, M. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Kohn, Erhard ; Konig, U.
Author_Institution :
Dept. of Electron Dev. & Circuits, Ulm Univ.
fDate :
8/3/2000 12:00:00 AM
Abstract :
The authors report on RF results of p-type Ge channel modulation doped field effect transistors (MODFETs) with a gate length of 1.0 μm. The structure was grown on a relaxed 4.9 μm thick compositionally graded Si0.4Ge0.6 buffer. The devices exhibit DC transconductances up to 190 mS/mm and saturation currents up to 190 mA/mm. Cutoff frequencies of fT 59 GHz and fmax=135 GHz have been obtained. The fmax value is, to the knowledge of the authors, the highest reported so far for p-type Si-based devices
Keywords :
Ge-Si alloys; high electron mobility transistors; semiconductor materials; 0.1 micron; 135 GHz; DC transconductance; Ge-Si0.4Ge0.6; RF characteristics; compositionally graded buffer layer; cutoff frequency; maximum oscillation frequency; p-type Ge/Si0.4Ge0.6 MODFET; saturation current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000964
