Title :
High breakdown GaN HEMT with overlapping gate structure
Author :
Zhang, N.-Q. ; Keller, S. ; Parish, G. ; Heikman, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus increasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 μm. The source-drain saturation current was 500 mA/mm and the extrinsic transconductance 150 mS/mm.
Keywords :
Aluminium compounds; Dielectric thin films; Gallium compounds; III-V semiconductors; Power HEMT; Semiconductor device breakdown; Semiconductor device measurement; Wide band gap semiconductors; 13 mum; 150 mS/mm; 570 V; AlGaN-GaN; AlGaN/GaN heterostructure; SiN; drain-side edge; drain-side gate edge; electric field; extrinsic transconductance; gate-drain spacing; high breakdown GaN HEMT; high breakdown high dielectric constant dielectric; metal gate; overlapping gate structure; source-drain saturation current; three-terminal breakdown figure; Aluminum gallium nitride; Breakdown voltage; Dielectric breakdown; Electric breakdown; Electrons; Gallium nitride; HEMTs; High-K gate dielectrics; Temperature; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
