Title :
Demonstration of aluminum-free metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on GaAs substrates
Author :
Hong Wang ; Geok Ing Ng ; Haiqun Zheng ; Yong Zhong Xiong ; Lye Heng Chua ; Kaihua Yuan ; Radhakrishnan, K. ; Soon Fatt Yoon
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
We report, for the first time, the successful fabrication of aluminum-free metamorphic (MM) InP/In/sub 0.53/ Ga/sub 0.47/ As/InP double heterojunction bipolar transistors (DHBTs) on GaAs substrates with a linearly graded In/sub x/Ga/sub 1-x/P buffer grown by solid-source molecular beam epitaxy (SSMBE). Devices with 5×5 μm2 emitters display a peak current gain of 40 and a common-emitter breakdown voltage (BV/sub CE0/) higher than 9 V, a current gain cut-off frequency (fT) of 48 GHz and a maximum oscillation frequency (fmax) of 42 GHz. A minimum noise figure of 2.9 dB and associated gain of 19.5 dB were measured at a collector current level of 2.6 mA at 2 GHz. Detailed analysis suggests that the degradation of the base-emitter heterojunction interface and the increase of bulk recombination are the most probable causes for the poorer device performance of current metamorphic HBTs compared with lattice-matched HBTs.
Keywords :
Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductors; Indium compounds; Microwave bipolar transistors; Molecular beam epitaxial growth; Semiconductor device breakdown; Semiconductor device noise; 19.5 dB; 2 GHz; 2.6 mA; 2.9 dB; 42 GHz; 48 GHz; 9 V; DHBTs; GaAs; GaAs substrates; InGaP; InP-In/sub 0.53/Ga/sub 0.47/As-InP; base-emitter heterojunction interface degradation; bulk recombination; collector current level; common-emitter breakdown voltage; current gain cut-off frequency; linearly graded In/sub x/Ga/sub 1-x/P buffer; maximum oscillation frequency; metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors; minimum noise figure; peak current gain; solid-source molecular beam epitaxy; Cutoff frequency; Displays; Double heterojunction bipolar transistors; Fabrication; Gain; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Noise figure; Substrates;
Journal_Title :
Electron Device Letters, IEEE