Title :
32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches
Author :
Rodbell, Kenneth P. ; Heidel, David F. ; Pellish, Jonathan A. ; Marshall, Paul W. ; Tang, Henry H K ; Murray, Conal E. ; LaBel, Kenneth A. ; Gordon, Michael S. ; Stawiasz, Kevin G. ; Schwank, James R. ; Berg, Melanie D. ; Kim, Hak S. ; Friendlich, Mark R.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Carlo modeling with a realistic heavy ion track structure, along with a new visualization aid (the Angular Dependent Cross-section Distribution, ADCD), allows one to quickly assess the improvements, or limitations, of a particular latch design. It was found to be an effective technique for making SEU predictions for alternative 32 nm SOI latch layouts.
Keywords :
CMOS integrated circuits; Monte Carlo methods; flip-flops; radiation hardening (electronics); semiconductor process modelling; silicon-on-insulator; CMOS; DICE latches; Monte Carlo modeling; SOI latch layouts; angular dependent cross-section distribution; data analysis; hardness assurance; heavy ion data; heavy ion track structure; latch design; radiation-hardened-by-design SOI latches; silicon-on-insulator; single event upset predictions; size 32 nm; size 45 nm; visualization aid; Latches; Monte Carlo methods; Protons; Radiation hardening; Silicon on insulator technology; Single event upset; 32 nm and 45 nm SOI hardened latches; angle dependent cross-section distributions; heavy ion modeling; sensitive node separation; silicon-on-insulator technology (SOI); single event effects (SEE); single event upset (SEU); track structures;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2171715
