DocumentCode :
1374691
Title :
Analyzing UV/Vis/NIR Spectra—Addition of Oxygen and Nitrogen to ZnO:Al Thin Films
Author :
Stadler, A. ; Stöllinger, J. ; Dittrich, H.
Author_Institution :
Univ. of Salzburg, Salzburg, Austria
Volume :
11
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
905
Lastpage :
912
Abstract :
Exact optical analysis of transparent-conductive-oxide (TCO) thin films are necessary to optimize adequate materials for optical sensor and solar cell applications. A non-numerical theoretical concept has been used to extract approximation-free optical, structural and electrical data from ultraviolet/visible/near-infrared (UV/Vis/NIR) spectra. Special focus has been set on double-layer systems, as thin films upon substrates. Complex parameter evaluation is possible. Sputtered aluminum-doped zinc-oxide (ZnO: Al) thin films have been analyzed with respect to oxygen and nitrogen additions to the inert argon process-gas. Based on UV/Vis/NIR spectra and a novel analysis model, complex optical, structural and electrical data have been evaluated for these transparent-conductive-oxide (TCO) layers. Correct extracted physical values as refractive indices, permittivities, absorption coefficients, deposition rates, conductivities and band gap energies allow a reliable dimensioning for optical sensor and solar cell designs. Results are compared with those of the well-known Keradec/Swanepoel model (KSM). The necessity of taking both spectra-transmission and reflection spectra-into account was shown. Results are discussed with structural properties of the thin films, by help of XRD-measurements. A noncontact, optical conductivity measurement possibility by use of UV/Vis/NIR spectroscopy has been shown. Optically measured conductivities have been compared with electrically measured ones.
Keywords :
II-VI semiconductors; X-ray diffraction; absorption coefficients; aluminium; electrical conductivity; energy gap; infrared spectra; infrared spectroscopy; nitrogen; optical variables measurement; permittivity; reflectivity; refractive index; semiconductor thin films; ultraviolet spectroscopy; visible spectroscopy; wide band gap semiconductors; zinc compounds; KSM; Keradec-Swanepoel model; TCO layer; TCO thin film; UV-Vis-NIR spectra; XRD-measurement; ZnO:Al,N; absorption coefficient; band gap energy; complex parameter evaluation; deposition rate; exact optical analysis; nonnumerical theoretical concept; optical conductivity measurement; optical sensor; refractive indices; solar cell application; spectra-transmission; sputtered aluminum-doped zinc-oxide; transparent-conductive-oxide layer; transparent-conductive-oxide thin film; ultraviolet-visible-near-infrared spectra; Aluminum-doped zinc-oxide (ZnO:Al); spectroscopy; transparent-conductive-oxide (TCO); ultraviolet/visible/near-infrared (UV/Vis/NIR);
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2010.2091499
Filename :
5629345
Link To Document :
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