Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect

Author

Park, Jubong ; Jo, Minseok ; Lee, Joonmyoung ; Jung, Seungjae ; Kim, Seonghyun ; Lee, Wootae ; Shin, Jungho ; Hwang, Hyunsang

Author_Institution

Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

32

Issue

1

fYear

2011

Firstpage

63

Lastpage

65

Abstract

Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance, which has a smaller gap distance confirmed by C-AFM, was successfully obtained. The leaky high-resistance state shows significantly improved switching uniformity compared to the high-resistance state, which has a higher resistance than the leaky high-resistance state, because of the confinement of the randomly formed conducting filaments. A faster operation speed was achieved using the smaller gap distance. To confirm the improved switching speed, we monitored the real-time oscilloscope response.

Keywords

atomic force microscopy; lightning protection; random-access storage; C-AFM; RRAM; filament-type resistive memory; lightning rod effect; real-time oscilloscope; switching speed; switching uniformity; Copper; Electron devices; Lightning; Nonvolatile memory; Oscilloscopes; Resistance; Switches; Resistive random-access memory (RRAM); switching speed; uniformity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2084560

Filename

5629432