Title :
All-optical discrimination at 1.5 μm using ultrafast saturable absorber vertical cavity device
Author :
Mangeney, J. ; Aubin, G. ; Oudar, J.L. ; Harmand, J.C. ; Patriarche, G. ; Choumane, H. ; Stelmakh, N. ; Lourtioz, J.M.
Author_Institution :
CNRS, Bagneux, France
fDate :
8/17/2000 12:00:00 AM
Abstract :
All-optical power discrimination at λ=1.5 μm is demonstrated for repetition frequencies >10 GHz by using a saturable absorber vertical cavity device. Measurements on modulated signals reveal a modulation contrast enhancement by a factor of four after reflection on the device. The ultrafast absorber response is obtained by heavy-ion irradiation of the absorbing layers. Frequency performances beyond 100 GHz can be further foreseen with this technique
Keywords :
III-V semiconductors; aluminium compounds; discriminators; gallium arsenide; high-speed optical techniques; indium compounds; ion beam effects; laser cavity resonators; optical modulation; optical saturable absorption; quantum well lasers; surface emitting lasers; 1.5 mum; 10 GHz; 100 GHz; InGaAs-InAlAs; InGaAs/InAlAs multiquantum wells; absorbing layers; all-optical discrimination; all-optical power discrimination; frequency performances; heavy-ion irradiation; modulated signals; modulation contrast enhancement; reflection; repetition frequencies; saturable absorber vertical cavity device; ultrafast absorber response; ultrafast saturable absorber vertical cavity device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001056
