Polycrystalline Silicon TFTs Threshold Voltage Compensated Bias Current Generator for Analog Circuit Design

Author

Pappas, Ilias ; Siskos, Stilianos ; Dimitriadis, Charalambos A.

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

Volume

6

Issue

12

fYear

2010

Firstpage

633

Lastpage

638

Abstract

A new bias current generator (BCG) with threshold voltage compensation for analog circuit design implemented with low-temperature polycrystalline silicon thin-film transistors (LT poly-Si TFTs) is proposed. The proposed topology can be used in AMOLED display applications or in other poly-Si TFTs current mode analog circuits. The functionality of the proposed circuit has been verified through simulations with HSpice. In order to obtain realistic simulations, parameters extraction in fabricated LT poly-Si TFTs was made. The simulation results indicate that the output current is independent from the transistors threshold voltage, without requiring additional capacitors or control signals for the threshold voltage compensation. Furthermore, low supply voltage is needed (10 V) and the impact of the threshold voltage variations was reduced from 54% to 3% for an output current of 2.5 μA.

Keywords

analogue circuits; low-power electronics; network synthesis; network topology; silicon; thin film transistors; AMOLED display; HSpice; analog circuit design; bias current generator; current 2.5 muA; polycrystalline silicon TFT; thin-film transistors; threshold voltage compensation; voltage 10 V; Active matrix organic light emitting diodes; Logic gates; Pixel; Thin film transistors; Threshold voltage; Active-matrix organic light-emitting diode (AMOLED); HSpice; bias current generator (BCG); polycrystalline silicon thin-film transistors (poly-Si TFTs); threshold voltage compensation;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2010.2075912

Filename

5630994