DocumentCode :
1375826
Title :
Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers
Author :
Huffaker, Diana L. ; Park, G. ; Zou, Zhengzhong ; Shchekin, O.B. ; Deppe, Dennis G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Volume :
6
Issue :
3
fYear :
2000
Firstpage :
452
Lastpage :
461
Abstract :
The understanding of material quality and luminescence characteristics of InGaAs-GaAs quantum dots (QD´s) is advancing rapidly. Intense work in this area has been stimulated by the recent demonstration of lasing from a QD active region at the technologically important 1.3-/spl mu/m wavelength from a GaAs-based heterostructure laser. Already, several groups have achieved low-threshold currents and current densities at room temperature from In(Ga)As QD active regions that emit at or close to 1.3 /spl mu/m. In this paper, we discuss crystal growth, QD emission efficiency, and low-threshold lasing characteristics for 1.3-/spl mu/m InGaAs-GaAs QD active regions grown using submonolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low-threshold current of 1.2 mA and threshold-current density of 19 A/cm/sup 2/ under continuous-wave (CW) room temperature (RT) operation. At 4 K, a remarkably low threshold-current density of 6 A/cm/sup 2/ is obtained.
Keywords :
Current density; Electroluminescence; Gallium arsenide; III-V semiconductors; Indium compounds; Quantum well lasers; Semiconductor growth; Semiconductor quantum dots; Spontaneous emission; 1.3 mum; GaAs-based heterostructure laser; InGaAs-GaAs; InGaAs-GaAs quantum-dot lasers; QD active region; QD emission efficiency; continuous-wave low-threshold performance; crystal growth; current densities; low-threshold current; low-threshold currents; low-threshold lasing characteristics; luminescence characteristics; material quality; oxide-confinement; room temperature; submonolayer depositions; threshold-current density; Current density; Electromagnetic coupling; Indium gallium arsenide; Laser modes; Laser theory; Optical materials; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.865100
Filename :
865100
Link To Document :
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