Laser-action in V-groove-shaped InGaAs-InP single quantum wires

We report on the realization of a V-groove-shaped single quantum wire (QWR) laser in the material system InGaAsP-InP. First, we discuss a new laser concept that makes use of a semi-insulating (s.i.) current-blocking layer and InGaAsP wave-guiding layers. Simulations demonstrate the concentration of both the current as well as the optical field in the active region. We developed a two-step wet-chemical etching process, to form high-quality V-grooves into a layer stack consisting of InP and InGaAsP. By employing anisotropic wet-chemical etching and anisotropic metal-organic vapor-phase epitaxial (MOVPE) growth, we demonstrate the feasibility of this concept. We show laser action originating from a single InGaAs QWR realized in this concept. The source of a second laser line measured with electroluminescence (EL) spectroscopy is discussed.