• DocumentCode
    1376342
  • Title

    Electron mobility and deep level trap profiles of MBE GaAs on Si MESFETs

  • Author

    Goostray, J. ; Thomas, H. ; Dumas, J.M. ; Hatzopolos, Z. ; Warner, D.

  • Author_Institution
    Univ. of Wales Coll. of Cardiff, UK
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    Low field electron mobility and deep trap profiles have been determined for 0.7 mu m gate length GaAs on Si MESFETs. The peak mobility at 300 K is 3600 cm2/V s, and the dominant trap has been identified as EL2 (Ea 0.83 eV), with a concentration of 2-6*1014 cm-3. The comparison of these profiles with those of GaAs/GaAs MESFETs has been used to assess the electrical effects of growth on a silicon substrate.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; carrier mobility; deep level transient spectroscopy; deep levels; gallium arsenide; molecular beam epitaxial growth; silicon; DLTS; GaAs-Si structure; III-V semiconductor; MBE layer; MESFET; Si substrate; deep level trap profiles; electron mobility; elemental semiconductor; peak mobility;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910054
  • Filename
    60819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1376342