GaN-Based LEDs With Sapphire Debris Removed by Phosphoric Etching

Author

Chang, Shoou-Jinn ; Kuo, D.S. ; Lam, K.T. ; Wen, K.H. ; Ko, T.K. ; Hon, S.J.

Author_Institution

Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

2

Issue

2

fYear

2012

Firstpage

349

Lastpage

353

Abstract

The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H₃PO₄ at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.

Keywords

III-V semiconductors; etching; gallium compounds; laser materials processing; light emitting diodes; sapphire; wide band gap semiconductors; Al₂O₃; GaN; GaN-based LED; debris contaminant; electrical characteristic; hot phosphoric etching method; light-emitting diode; nanosecond laser; sapphire debris; temperature 220 degC; time 40 min; Current measurement; Educational institutions; Etching; Gallium nitride; Light emitting diodes; Power generation; Substrates; GaN; hot phosphoric etching; laser scribing; light emitting diodes; sapphire substrate;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2011.2167972

Filename

6081909