Title :
Scaled silicon MOSFETs: degradation of the total gate capacitance
Author :
Vasileska, Dragica ; Schroder, Dieter K. ; Ferry, David K.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
We use a fully quantum-mechanical model to study the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFETs. We show that, when the device is in weak and moderate inversion, the inclusion of image and many-body exchange-correlation effects increases both the inversion layer and total gate capacitances and shifts the Ns=Ns(VG) characteristics of the device toward lower gate voltages
Keywords :
MOSFET; capacitance; elemental semiconductors; inversion layers; semiconductor device models; silicon; Si; fully quantum-mechanical model; gate voltages; image effects; inversion layer; many-body exchange-correlation effects; moderate inversion; scaled MOSFETs; total gate capacitance degradation; Capacitance; Degradation; Density measurement; Doping; MOSFETs; Poisson equations; Potential energy; Quasi-doping; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
